Plasma etch

Deep reactive ion etching (DRIE)

The Oxford PlasmaPro 100 Cobra 300 is plasma-based system for etching and deposition. This tool utilizes a high-density inductively coupled plasma to achieve high-rate dry etching of silicon-based substrates. Its ICPCVD process module is designed to produce high quality films at low growth temperatures, and typical materials deposited include SiO₂, Si₃N₄ and SiON, Si and SiC at substrate temperatures as low as 5 ºC.

Tool specs:

• Compatible with all wafer sizes up to 200mm
• ICP Power (max): 3000 W
• RF Power (max): 600 W
• Pieces must be >7mm from edge of carrier to avoid wafer-clamping mechanism
•Standard masking materials include: SiO2, Si3N4, photoresist (at << 100°C)

Plasma cleaner (Harrick Plasma PDC-001-HP)

The Harrick Plasma PDC-001-HP is a benchtop high-power plasma cleaner widely used for etching, surface cleaning, activation, and modification. Compact and easy to use, this system provides a safe and effective method for generating low-pressure RF plasma, typically using air or oxygen, to alter surface properties without harsh chemicals or high temperatures. It has maximum RF power of 45W with  adjustable RF power settings (Low, Medium, High).

Key functions: 

• Etching (mild): Low-level etching of soft materials such as polymers for patterning or cleaning.
• Surface Cleaning: Removes organic contaminants and residues from substrates (e.g., wafers, glass, metals, plastics). Enables improved bonding, adhesion, and film uniformity for subsequent processing.
• Surface Activation: Introduces functional groups (e.g., hydroxyl, carboxyl) on surfaces to enhance hydrophilicity. Promotes adhesion of photoresists, polymers, or biological coatings.
• Surface Modification: Alters surface energy and chemical reactivity without damaging bulk properties. Useful for tailoring polymer surfaces or creating biocompatible materials.